The two companies signed supply and capacity reservations for PROFET™ power switches and silicon carbide (SiC) CoolSiC™ semiconductors. Stellantis N.V. and Infineon Technologies AG have announced a ...

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on PEN eBook November 2024, GaN Devices, Oscilloscope Signal Probing! Here’s a RoundUp of this week’s must ...

Which sets the simulation temperature to 12°C, for all electronic components. Transistor Q1, within its internal model, contains many parameters for thermal management, and they take into account the ...

In our conversation, she shares the incredible milestones of her career, the vision she holds for VisIC’s impact in electric vehicles, and her personal insights on leadership and balancing life as a ...

Over the past 15 years, perovskite solar cells (PSCs) have garnered attention for their potential to surpass the efficiency of traditional silicon solar cells at a fraction of the cost. Solar energy ...

The isolated gate drivers target industrial and energy applications, as well as power control in charging stations, energy storage systems, and power supply units. The STGAP3S family of gate drivers ...

Transforming the electrical network involves implementing renewable energy systems at a large and small scale to fulfill the fluctuating global electricity demand. Transforming the electrical network ...

Power-cycling helps to determine how well or badly the device can withstand thermal fatigue and maintain performance over time. High-stakes applications today require a heightened level of quality and ...

The efficiency and power density advantages of GaN are essential in meeting global energy goals without increasing costs. Global energy consumption is rising, driven by population growth and economic ...

The Sommerfeld model represents a decisive step forward compared to the Drude-Lorentz model. To repeat the experiment proposed in the previous tutorial (measurement of the effective mass of electrons ...

The input voltage range of the Variable Step Down MicroModule from 3.5 to 60 V now covers bus voltages from 5 to 48 V. Würth Elektronik has introduced a new generation of MagI³C-VDMM power modules.

This next-generation power supply achieves 98% efficiency with high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs for AI and hyperscale data centers. Navitas Semiconductor has introduced the world’s ...