Mitsubishi Electric will begin shipping samples of two new S1-Series High Voltage IGBT modules, both rated at 1.7kV, for ...

Power Integrations has introduced a wide-creepage package option for its InnoSwitch3-AQ flyback switcher IC for automotive ...

The US Department of Commerce has issued funding awards to GlobalWafers and its subsidiaries of up to $406 million under the ...

GaN power transistors are at a tipping point. It’s a juncture where any small change or action leads to significant and often ...

Under the agreement, the United States would support Bosch’s investment of $1.9 billion to modernise its SiC manufacturing ...

GaN power devices have many attributes. They are renowned for their exceptional switching efficiency and high power density, strengths that are driving the development of miniaturised, energy-saving ...

The number of power-hungry applications involving massive computation is on the rise, due to growth in datacenters, AI, wafer-scale compute, supercomputers and 5G/6G networks. Due to this, there is a ...